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TLN227(F)
TOSHIBA Infrared LED GaAAs Infrared Emitter
TLN227(F)
Lead(Pb)-Free For Space-Optical-Transmission
* * * * * * High radiant power: Po = 18mW (typ.) at IF = 50mA Wide half-angle value: = 1 / 2 21 (typ.) High-speed response: tr, tf = 30ns (typ.) Light source for remote control Designed for transmission of wireless AVsignals purpose. Designed for high-speed data transmission Unit: mm
Absolute Maximum Ratings (Ta = 25C)
Characteristic Forward current Pulse forward current Power dissipation Reverse voltage Operating temperature Storage temperature Soldering temperature (5s) Symbol IF IFP PD VR Topr Tstg Tsol Rating 100 1000 (Note 1) 220 4 -25~85 -30~100 260 Unit mA mA mW V C C C
TOSHIBA
4-6J1
Note: Using continuously under heavy loads (e.g. the application of high Pin Connection temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the 1. Anode 1 2 reliability significantly even if the operating conditions (i.e. 2. Cathode operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Frequency = 100kHz, duty = 1%
Optical And Electrical Characteristics (Ta = 25C)
Characteristic Forward voltage Reverse current Radiant power Radiant intensity Rise time, fall time Cut-off frequency Capacitance Peak emission wavelength Spectral line half width Half value angle (Note 2) Symbol VF IR PO IE tr, tf fc CT P
1 2
Test Condition IF = 100mA VR = 4V IF = 50mA IF = 50mA IFP = 100mA, PW = 100ns IF = 50mADC + 5mAp-p VR = 0, f = 1MHz IF = 50mA IF = 50mA IF = 50mA
Min 14 10 830
Typ. 1.8 18 100 30 15 110 870 50 5
Max 2.2 60 900
Unit V A mW mW / sr ns MHz pF nm nm
Note 2: Frequency when modulation light power decreases by 3dB from 1 MHz.
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TLN227(F)
Precautions
Please be careful of the followings. 1. Soldering must be performed under the lead stopper. 2. When forming the leads, bend each lead under the stopper without leaving forming stress to the body of the device. Soldering must be performed after the leads have been formed. 3. Radiant power falls over time due to the current which flows in the infrared LED. When designing a circuit, take into account this change in radiant power over time.
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TLN227(F)
IF - Ta
120 100
IF - VF
(typ.)
100
85C
Allowable forward current IF (mA)
(mA)
10
75C 50C
80
-25C 0C 25C
Forward current IF
60
1
40
0.1
20
0 0
20
40
60
80
100
120
140
0.01 1
1.2
1.4
1.6
1.8
2
Ambient temperature Ta (C)
Forward voltage VF
(V)
VF - Ta
1.9
(typ.)
1000 500 300
IFP - VFP
(typ.)
1.7 1.6 1.5 1.4 1.3 1.2 1.1 -50
IF = 80mA IF = 50mA
Pulse Forward Current IFP (mA)
1.8
(V)
Forward voltage VF
100 50 30
IF = 20mA IF = 5mA
10 5 3 Pulse width 100s Repetitive frequency = 100Hz Ta = 25C 1 2 3 4 5 6
25
0
25
50
75
100
125
1 0
Ambient temperature Ta (C)
Pulse forward voltage
VFP (V)
IFP - PW
20000 10000 5000 3000 Ta = 25C 1.2 Pulse width = 1ms 1.0 Duty = 10%
Relative
PO - IFP
(typ.)
Allowable pulse forward current IFP (mA)
Relative radiant power
0.8
1000 500 300 1k 2k 5k 10k
f = 100Hz 200 500
0.6
0.4
100 50 30 3
0.2
10
30
100
300
1m
3m
10m
0 0
200
4000
600
800
1000
Pulse width
PW (s)
Pulse forward current IFP (mA)
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TLN227(F)
Relative
10
PO - Ta
(typ.)
1000
Distance Characteristics
Relative radiant power
TPS703(F) short circuit current ISC (A)
IF = 50mA 1
100 Pop = 23mW at IFP = 180mA, f = 100kHz, duty = 50%
10
0.1 -50
-25
0
25
50
75
100
125
Po = 14mW at IF = 50mA
Ambient temperature Ta (C)
1
Wavelength Characteristic (typ.)
1.0 IF = 50mA 0.1 0.01 0.1 1 10
Distance
0.8
d (m)
Relative radiant power
0.6
0.4
0.2
0 800
840
880
920
960
1000
Wavelength (nm)
Radiation Pattern
(typ.) Ta = 25C
4 2 0
Frequency Characteristic
(typ.)
20 30 40 50 60 70 80 90
10
10
20 30 40 50 60 70 80 90 1.0
(dB) Response
0.8
0
-2 -4 -6 -8 -10 0.1
0
0.2
0.4
0.6
0.3 0.5
1
3
5
10
30 50
100
Relative radiant power
Frequency f
(MHz)
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TLN227(F)
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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